The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jan. 19, 2015
Globalfoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Nakahara-Ku, JP;
Ajey Poovannummoottil Jacob, Albany, NY (US);
Murat Kerem Akarvardar, Saratoga Springs, NY (US);
Steven Bentley, Watervliet, NY (US);
Toshiharu Nagumo, Kanagawa, JP;
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Ali Khakifirooz, San Jose, CA (US);
GlobalFoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Nakahara-Ku, JP;
Abstract
Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of replacement fins is formed over the retrograde doped layer, each of the set of replacement fins comprising a high mobility channel material (e.g., silicon, or silicon-germanium). The retrograde doped layer may be formed using an in situ doping process or a counter dopant retrograde implant. The device may further include a carbon liner positioned between the retrograde doped layer and the set of replacement fins to prevent carrier spill-out to the replacement fins.