The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Dec. 19, 2013
Renesas Electronics Corporation, Kawasaki-shi, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor device includes a channel structure formed on a substrate, the channel structure being formed of a semiconductor material. A gate structure covers at least a portion of the surface of the channel structure and is formed of a film of insulation material and a gate electrode. A source structure is connected to one end of the channel structure, and a drain structure is connected to the other end of the channel structure. The channel structure has a non-uniform composition, in a cross-sectional view, that provides a reduction of a leakage current of the semiconductor device relative to a leakage current that would result from a uniform composition.