The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Mar. 11, 2014
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Toshiharu Nagumo, Kanagawa, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/845 (2013.01);
Abstract
A semiconductor device and method making it comprises pFETs with an SiGe channel and nFETs with an Si channel, formed on an SOI substrate. Improved uniformity of fin height and width is attained by forming the fins additively by depositing an SiGe layer on the SOI substrate and forming first fins from the superposed SiGe layer and underlying thin Si film of the SOI substrate. Second fins of Si can then be formed by replacing the upper SiGe portions of selected first fins with Si.