Hakusan, Japan

Toshifumi Nishiguchi

This inventor holds 22 USPTO granted patents and 13 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshifumi Nishiguchi. Retrieved from https://idiyas.com/inventor/toshifumi-nishiguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 90.9

Average Co-Inventor Count = 1.7

ph-index = 3

Forward Citations = 35(Granted Patents)


Location History:

  • Nonoichi Ishikawa, JP (2017)
  • Hakusan, JP (2019 - 2020)
  • Ishikawa, JP (2015 - 2021)
  • Hakusan Ishikawa, JP (2017 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Semiconductor Device
Trench-Gate MOS Transistor
Field Plate Electrode
Manufacturing Method
Power Semiconductor
Conductive Portion
Electrode Structure
MOS Transistor
22 patents (USPTO):Explore Patents

Title: **Toshifumi Nishiguchi: Innovator in Semiconductor Technology**

Introduction

Toshifumi Nishiguchi is a prominent inventor based in Hakusan, Ishikawa, Japan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 21 patents, he has dedicated his career to advancing innovations that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations, Nishiguchi has developed a trench-gate MOS transistor and method for manufacturing the same. This semiconductor device features a semiconductor part with first and second electrodes positioned on the back and front surfaces, respectively. Notably, it includes a control electrode located within a trench of the semiconductor part, insulated from both the semiconductor and the second electrode by distinct insulating films. This unique design allows for improved electrical characteristics.

Another noteworthy patent is a semiconductor device that comprises a first electrode and multiple semiconductor regions layered strategically to optimize electrical connectivity and performance. The device also integrates insulating portions designed to manage electrical interactions effectively, further underscoring Nishiguchi's expertise in the semiconductor arena.

Career Highlights

Nishiguchi has made substantial strides in his career, having worked with leading companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His extensive experience in these organizations has allowed him to refine his skills and push the boundaries of semiconductor innovations, achieving a remarkable impact on the industry.

Collaborations

Throughout his career, Nishiguchi has collaborated closely with talented professionals, including Hiroaki Katou and Saya Shimomura. These partnerships have contributed to the depth and breadth of his research and the successful development of several key inventions in the semiconductor field.

Conclusion

Toshifumi Nishiguchi's contributions to semiconductor technology are significant and continue to influence the industry. With his innovative patents and collaborative spirit, he remains a vital figure in the world of electronics, paving the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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