The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Apr. 02, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Kenya Kobayashi, Ishikawa, JP;

Tetsuo Matsuda, Ishikawa, JP;

Yosuke Himori, Kanagawa, JP;

Toshifumi Nishiguchi, Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/26506 (2013.01); H01L 21/31111 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01); H01L 29/511 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region, a second insulating part provided on the first electrode, a gate electrode provided on the second insulating part, a gate insulating part provided between the gate electrode and the second semiconductor region, and a second electrode provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first electrode.


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