Nonoichi, Japan

Kenya Kobayashi

This inventor holds 25 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2016-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenya Kobayashi. Retrieved from https://idiyas.com/inventor/kenya-kobayashi-sgbl9ozl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 52(Granted Patents)


Location History:

  • Ishikawa, JP (2018 - 2021)
  • Nonoichi, JP (2020 - 2022)
  • Nonoichi Ishikawa, JP (2016 - 2023)

Company Filing History:


Years Active: 2016-2023

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Vertical Power MOSFET
Trench Structure
Graded Drift Region
Insulating Section
Power Semiconductor
Semiconductor Package
25 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Kenya Kobayashi in Semiconductor Technology

Introduction

Kenya Kobayashi, an accomplished inventor from Nonoichi, Ishikawa, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 25 patents, his innovations continue to influence advancements in electronic devices.

Latest Patents

Kobayashi's latest patents focus on semiconductor devices, showcasing his expertise in complex electrical components. One noteworthy invention is a semiconductor device that incorporates first and second electrodes, along with multiple semiconductor regions and an insulating part. This design enhances the efficiency and functionality of semiconductor components, featuring gate electrodes and conductive elements strategically positioned for optimal performance. Another significant patent involves a method of manufacturing a semiconductor device that includes a semiconductor part, control electrodes, and second electrodes, showcasing advancements in electrical isolation and thickness management through enhanced insulating films.

Career Highlights

Throughout his career, Kenya Kobayashi has been associated with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His contributions at these organizations have paved the way for innovative technologies in the semiconductor domain, reflecting his commitment to enhancing electronic device functionality and efficiency.

Collaborations

Kobayashi has worked alongside talented individuals in the field, including Hiroaki Katou and Tatsuya Nishiwaki. These collaborations have fostered a dynamic exchange of ideas, leading to innovations that push the boundaries of semiconductor technology.

Conclusion

Kenya Kobayashi's extensive portfolio of patents and his impactful career highlight his role as a leading innovator in semiconductor technology. His work continues to inspire advancements that shape the future of electronics, underscoring the importance of innovation in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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