The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Mar. 01, 2017
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, first and second electrodes, second and third insulating units, and gate electrodes provided in the first semiconductor region and the second semiconductor region via a first insulating unit and extending in a first direction. The first electrode is provided on and electrically connected to the third semiconductor region. The second insulating unit is spaced apart from the gate electrodes in the first semiconductor region and extends in a second direction. The third insulating unit includes an insulating portion extending in the first direction and positioned between the gate electrodes and the second insulating unit in the second direction. The second electrode is electrically connected to the gate electrodes and provided on the second and third insulating units.