The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

May. 13, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Kenya Kobayashi, Nonoichi Ishikawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/45 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, an insulating part, a conductive part, and a gate electrode. The first semiconductor region is provided on the first electrode and is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating part is provided on the first electrode. The conductive part is provided in the insulating part and is arranged with the first semiconductor region. The gate electrode is provided in the insulating part. The gate electrode is positioned above the conductive part and is arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and the insulating part, and is electrically connected to the third semiconductor region.


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