The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Aug. 16, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Tatsuya Nishiwaki, Nonoichi Ishikawa, JP;
Kohei Oasa, Nonoichi Ishikawa, JP;
Toshifumi Nishiguchi, Hakusan Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor body, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on the semiconductor body. The first and second control electrodes each include a first portion positioned between the semiconductor body and the first electrode, a second portion positioned between the semiconductor body and the second electrode, and a third portion linked to the first and second portions. The semiconductor body includes first to fourth semiconductor layers. The second semiconductor layer is provided on the first semiconductor layer, and extends along the first to third portions. The fourth semiconductor layer is provided selectively on the second semiconductor layer, and extends along the second and third portions. The fourth semiconductor layer includes second conductivity-type impurities with a higher concentration than a concentration of second conductivity-type impurities in the second semiconductor layer.