The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Sep. 09, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Toshifumi Nishiguchi, Hakusan Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first electrode; a first semiconductor region provided on the first electrode; a second semiconductor region provided on the first semiconductor region; a third semiconductor region provided on the second semiconductor region; a second electrode provided on the third semiconductor region and electrically connected to the third semiconductor region; a third electrode aligned with the first semiconductor region and the second semiconductor region; a gate electrode provided between the third electrode and the second semiconductor region; a first insulating portion including a first insulating region provided between the third electrode and the first semiconductor region and facing the third electrode, a second insulating region facing the first semiconductor region, and at least one air-gap region located between the first insulating region and the second insulating region; and a second insulating portion provided between the gate electrode and the second semiconductor region.