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For the Inventor, By the Inventor

Tokyo, Japan

Tomohide Terashima

This inventor holds 88 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices (CPC class 257409). Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation, Renesas Technology Corp.. Active years: 1991-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohide Terashima. Retrieved from https://idiyas.com/inventor/tomohide-terashima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 88 

% Patents Active = 94.3

Average Co-Inventor Count = 1.3

ph-index = 14

Forward Citations = 552(Granted Patents)

Forward Citations (Not Self Cited) = 502(Dec 10, 2025)


Inventors with similar research interests:


    Location History:

    • Fukoaka, JP (1993)
    • Fukuoka, JP (1991 - 1996)
    • Itami, JP (1991 - 1996)
    • Hyogo, JP (1995 - 2009)
    • Chiyoda-ku, JP (2003 - 2014)
    • Tokyo, JP (1999 - 2023)

    Company Filing History:

    goldMedal64 out of 21,351 
     
    Mitsubishi Denki Kabushiki Kaisha
     patents
    silverMedal20 out of 16,602 
     
    Mitsubishi Electric Corporation
     patents
    bronzeMedal2 out of 3,781 
     
    Renesas Technology Corp.
     patents
    4. 1 out of 24 
     
    Mitsubushi Denki Kabushiki Kaisha
     patents
    5. 1 out of 834,513 
    Other
     patents

    Years Active: 1991-2026

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    Areas of Expertise:
    Semiconductor Device
    High Breakdown Voltage
    Manufacturing Method
    Insulated Gate Bipolar Transistor
    Charging Current
    SOI Substrate
    Conductive Films
    High Power Applications
    Fuse
    Isolation
    Counterelectromotive Force
    88 patents (USPTO):Explore Patents
    1. 12660590 - Semiconductor device (2026-06-16),
    2. 11670634 - Semiconductor device (2023-06-06),
    3. 11552073 - Semiconductor device (2023-01-10),
    4. 11217449 - Semiconductor device and method of manufacturing same (2022-01-04),
    5. 9159563 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus (2015-10-13),
    6. 9048111 - Semiconductor device (2015-06-02),
    7. 8878239 - Semiconductor device (2014-11-04),
    8. 8772903 - Semiconductor device with reduced potential between adjacent floating regions (2014-07-08),
    9. 8710617 - Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region (2014-04-29),
    10. 8674471 - Semiconductor device supplying charging current to element to be charged (2014-03-18),
    11. 8466515 - Semiconductor device (2013-06-18),
    12. 8395231 - Semiconductor device supplying charging current to element to be charged (2013-03-12),
    13. 8120107 - Semiconductor device internally having insulated gate bipolar transistor (2012-02-21),
    14. 8093660 - Semiconductor device (2012-01-10),
    15. 7898029 - Semiconductor device internally having insulated gate bipolar transistor (2011-03-01),

    Title: The Innovative Journey of Tomohide Terashima

    Introduction: Tomohide Terashima is a pioneering inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

    Latest Patents: Tomohide Terashima holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

    Career Highlights: With a career spanning over two decades, Terashima has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

    Collaborations: Throughout his career, Tomohide Terashima has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

    Conclusion: Tomohide Terashima's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

    Profile summary based on public USPTO records.
    Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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