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Tomohide Terashima

USPTO Granted Patents = 87 (Patent Applications = 3)

Average Co-Inventor Count = 1.3

ph-index = 14

Forward Citations = 548(Granted Patents)

Forward Citations (Not Self Cited) = 502(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fukoaka, JP (1993)
Fukuoka, JP (1991 - 1996)
Itami, JP (1991 - 1996)
Hyogo, JP (1995 - 2009)
Chiyoda-ku, JP (2003 - 2014)
Tokyo, JP (1999 - 2023)

Company Filing History:

64 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

19 out of 15,906

Mitsubishi Electric Corporation

Renesas Technology Corp.

Mitsubushi Denki Kabushiki Kaisha

5. 1 out of 832,843

Other

patents

Years Active: 1991-2023

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Areas of Expertise:

Semiconductor Device

High Breakdown Voltage

Integrated Semiconductor Device

Insulated Gate Bipolar Transistor

High Voltage Breakdown Isolation

Field MOS Transistor

CMOS Semiconductor Device

Transistor Technology

Manufacturing Process

Charging Current Supply

Floating Electrode Structure

High Power Applications

87 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11670634 - Semiconductor device (2023-06-06),

2. 11552073 - Semiconductor device (2023-01-10),

3. 11217449 - Semiconductor device and method of manufacturing same (2022-01-04),

4. 9159563 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus (2015-10-13),

5. 9048111 - Semiconductor device (2015-06-02),

6. 8878239 - Semiconductor device (2014-11-04),

7. 8772903 - Semiconductor device with reduced potential between adjacent floating regions (2014-07-08),

8. 8710617 - Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region (2014-04-29),

9. 8674471 - Semiconductor device supplying charging current to element to be charged (2014-03-18),

10. 8466515 - Semiconductor device (2013-06-18),

11. 8395231 - Semiconductor device supplying charging current to element to be charged (2013-03-12),

12. 8120107 - Semiconductor device internally having insulated gate bipolar transistor (2012-02-21),

13. 8093660 - Semiconductor device (2012-01-10),

14. 7898029 - Semiconductor device internally having insulated gate bipolar transistor (2011-03-01),

15. 7855427 - Semiconductor device with a plurality of isolated conductive films (2010-12-21),

Title: The Innovative Journey of Tomohide Terashima

Introduction: Tomohide Terashima is a pioneering inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tomohide Terashima holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Terashima has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Tomohide Terashima has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Tomohide Terashima's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

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