The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Sep. 08, 2008
Applicant:
Tomohide Terashima, Chiyoda-ku, JP;
Inventor:
Tomohide Terashima, Chiyoda-ku, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A voltage mitigating element mitigating a voltage applied across a gate insulating film in an off state of an insulated gate bipolar transistor (IGBT) is arranged to a gate electrode node of a P-channel MOS transistor provided for suppressing flow-in of holes at the time of turn-off of the IGBT. Withstanding voltage characteristics are improved and an occupation area thereof is reduced while maintaining switching characteristics and a low on-resistance of an insulated gate bipolar transistor.