The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jan. 07, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Tomohide Terashima, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
There are provided a transistor including a first semiconductor layer of a first conductivity type, a second semiconductor layer thereabove, a first impurity region of a second conductivity type provided in an upper layer part of the second semiconductor layer, a second impurity region of a first conductivity type provided in an upper layer part of the first impurity region, a gate electrode facing the first impurity region and the second semiconductor layer with a gate insulating film interposed in between, and first and second main electrodes; a parasitic transistor with the second impurity region as a collector, the first and the second semiconductor layers as an emitter, and the first impurity region as a base; a parasitic diode with the first impurity region as an anode, and the first and the second semiconductor layers as a cathode; and a pn junction diode with the first impurity region as an anode, and the second impurity region as a cathode.