The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 20, 2011
Tomohide Terashima, Chiyoda-ku, JP;
Tomohide Terashima, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
On a main surface of a semiconductor substrate, an Nsemiconductor layer is formed with a dielectric portion including relatively thin and thick portions interposed therebetween. In a predetermined region of the Nsemiconductor layer, an N-type impurity region and a P-type impurity region are formed. A gate electrode is formed on a surface of a portion of the P-type impurity region located between the N-type impurity region and the Nsemiconductor layer. In a predetermined region of the Nsemiconductor layer located at a distance from the P-type impurity region, another P-type impurity region is formed. As a depletion layer block portion, another N-type impurity region higher in impurity concentration than the Nsemiconductor layer is formed from the surface of the Nsemiconductor layer to the dielectric portion.