Ting-Fu Chang

Title: Innovations of Ting-Fu Chang

Introduction

Ting-Fu Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

One of his latest patents is the "Structure of High Electron Mobility Light Emitting Transistor." This invention comprises a substrate, a high electron mobility transistor (HEMT) region, and a gallium nitride LED (GaN-LED) region. A two-dimensional electron gas layer is present in both the HEMT and LED regions, allowing for improved coupling between them. Another notable patent is the "Semiconductor Structure," which includes a substrate, an epitaxial layer, an active area, and a termination. This structure is designed to protect the active area while enhancing its functionality.

Career Highlights

Ting-Fu Chang has worked with several reputable organizations, including Richtek Technology Corporation and Tsinghua University. His experience in these institutions has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

He has collaborated with notable colleagues such as Chih-Fang Huang and Tsung-Yi Huang, contributing to various projects that advance the field of electronics.

Conclusion

Ting-Fu Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced electronic devices.