The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
May. 20, 2013
Chih-fang Huang, Hsinchu, TW;
Po-chin Peng, Zhubei, TW;
Tsung-chieh Hsiao, Changhua, TW;
Ya-hsien Liu, Hsinchu, TW;
K. C. Chang, New Taipei, TW;
Hung-der Su, Pingzhen, TW;
Chien-wei Chiu, Yunlin, TW;
Tsung-yi Huang, Hsinchu, TW;
Tsung-yu Yang, Kaohsiung, TW;
Ting-fu Chang, Taipei, TW;
Chih-Fang Huang, Hsinchu, TW;
Po-Chin Peng, Zhubei, TW;
Tsung-Chieh Hsiao, Changhua, TW;
Ya-Hsien Liu, Hsinchu, TW;
K. C. Chang, New Taipei, TW;
Hung-Der Su, Pingzhen, TW;
Chien-Wei Chiu, Yunlin, TW;
Tsung-Yi Huang, Hsinchu, TW;
Tsung-Yu Yang, Kaohsiung, TW;
Ting-Fu Chang, Taipei, TW;
Richtek Technology Corporation, R.O.C., Chupei, Hsinchu, unknown;
Abstract
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.