Po-Chin Peng

Title: Po-Chin Peng: Innovator in Insulated Gate Bipolar Transistors

Introduction

Po-Chin Peng is a notable inventor based in Zhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of insulated gate bipolar transistors (IGBTs). With a total of 4 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

Among his latest patents is an insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate. This invention discloses an IGBT that includes a gallium nitride (GaN) substrate, a first GaN layer with a first conductive type, a second GaN layer with a first conductive type, and a third GaN layer with a second conductive type or an intrinsic conductive type. The gate is formed on the GaN substrate, with specific structural features designed to enhance performance.

Another patent by Po-Chin Peng also focuses on an insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate, showcasing his expertise in this area. The detailed design and manufacturing method of these IGBTs reflect his innovative approach to semiconductor technology.

Career Highlights

Po-Chin Peng has worked with Richtek Technology Corporation, where he has contributed to various projects and advancements in semiconductor technology. His experience in this company has allowed him to refine his skills and knowledge in the field.

Collaborations

Throughout his career, Po-Chin Peng has collaborated with notable colleagues such as Chih-Fang Huang and Tsung-Yi Huang. These collaborations have further enriched his work and contributed to the development of innovative technologies.

Conclusion

Po-Chin Peng is a distinguished inventor whose work in insulated gate bipolar transistors has made a significant impact on the semiconductor industry. His patents and collaborations reflect his dedication to innovation and excellence in technology.