The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Sep. 28, 2013
Chih-fang Huang, Hsinchu, TW;
Tsung-yi Huang, Hsinchu, TW;
Chien-wei Chiu, Yunlin, TW;
Tsung-yu Yang, Kaohsiung, TW;
Ting-fu Chang, Taipei, TW;
Tsung-chieh Hsiao, Changhua, TW;
Ya-hsien Liu, Hsinchu, TW;
Po-chin Peng, Zhubei, TW;
Chih-Fang Huang, Hsinchu, TW;
Tsung-Yi Huang, Hsinchu, TW;
Chien-Wei Chiu, Yunlin, TW;
Tsung-Yu Yang, Kaohsiung, TW;
Ting-Fu Chang, Taipei, TW;
Tsung-Chieh Hsiao, Changhua, TW;
Ya-Hsien Liu, Hsinchu, TW;
Po-Chin Peng, Zhubei, TW;
Richtek Technology Corporation, R.O.C., Chupei, HsinChu, TW;
Abstract
The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer.