The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Dec. 31, 2014
National Tsing Hua University, Hsinchu, TW;
Chih-Fang Huang, Hsinchu, TW;
Yi-Chen Li, Taichung, TW;
Ting-Fu Chang, Hsinchu, TW;
Keh-Yung Cheng, Hsinchu, TW;
Yu-Li Wang, Hsinchu, TW;
Chun-Hung Wu, Hsinchu, TW;
Wei-Chen Yang, Hsinchu, TW;
Shao-Yen Chiu, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile