This inventor holds 2 USPTO granted patents. Top assignee: National Tsing Hua University. Active years: 2015-2016.
Company Filing History:
Years Active: 2015-2016
Title: Innovations of Yu-Li Wang
Introduction
Yu-Li Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility light emitting transistors and gallium nitride epitaxy methods. With a total of 2 patents, his work has garnered attention for its innovative approaches and practical applications.
Latest Patents
One of Yu-Li Wang's latest patents is the "Structure of High Electron Mobility Light Emitting Transistor." This invention comprises a substrate, a high electron mobility transistor (HEMT) region, and a gallium nitride LED (GaN-LED) region. A two-dimensional electron gas layer is present in both the HEMT and LED regions, allowing for efficient coupling between them.
Another notable patent is the "GaN Epitaxial Growth Method." This method utilizes a nano-scale patterning process to reduce the dislocation defect density of a GaN epitaxy layer. The nano-scale structure dimensions help minimize strain energy from mismatched lattices, thereby decreasing defect generation. The invention also incorporates soft mask nanoimprint lithography (NIL) technology for uniform deposition and position control of InAs quantum dots on GaAs substrates.
Career Highlights
Yu-Li Wang is affiliated with National Tsing Hua University, where he continues to advance research in semiconductor technologies. His work has not only contributed to academic knowledge but also has practical implications in the electronics industry.
Collaborations
Yu-Li Wang has collaborated with notable colleagues, including Wei-Chen Yang and Shao-Yen Chiu, who have contributed to his research endeavors. Their combined expertise has further enhanced the impact of their innovations in the field.
Conclusion
In summary, Yu-Li Wang is a distinguished inventor whose work in high electron mobility light emitting transistors and gallium nitride epitaxy methods has made significant strides in semiconductor technology. His contributions continue to influence both academic research and practical applications in the industry.