The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Oct. 01, 2015
National Tsing Hua University, Hsinchu, TW;
Chih-Fang Huang, Hsinchu, TW;
Ting-Fu Chang, Hsinchu, TW;
Hua-Chih Hsu, Hsinchu, TW;
Jheng-Yi Jiang, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A semiconductor structure comprises a substrate, an epitaxial layer, an active area and a termination. The substrate has a first conducting type of semiconductor material. The epitaxial layer disposed on the substrate has a first conducting type of semiconductor material. The active area is a working area of the semiconductor structure. The termination protects the active area. The termination has a junction termination extension (JTE) having a second conducting type of semiconductor material. The counter-doped area is disposed in the JTE area and has the first conducting type of semiconductor material. A dose of the first conducting type of semiconductor material in the counter-doped area increases along one direction.