Company Filing History:
Years Active: 2016-2021
Title: Jheng-Yi Jiang: Innovator in Semiconductor Technology
Introduction
Jheng-Yi Jiang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal-oxide-semiconductor field-effect transistors (MOSFETs). With a total of 3 patents to his name, Jiang's work has advanced the understanding and application of semiconductor devices.
Latest Patents
Jheng-Yi Jiang's latest patents include innovative methods and structures for MOSFETs. One of his notable patents is titled "Structure and a manufacturing method of a MOSFET with an element of IVA group ion implantation." This patent discloses a structure where the IVA group ion implantation layer is strategically placed in the body, close to the interface between the gate oxide layer and the body. This layer is utilized to modify the properties of the channel within the structure.
Another significant patent is "Structure of trench metal-oxide-semiconductor field-effect transistor." This invention describes a trench MOSFET structure that features an N-current spread layer and a split gate structure, which is covered by an insulating layer. The design includes a semiconductor protection layer that safeguards the insulating layer from electric field breakdown, enhancing the reliability of the device.
Career Highlights
Jheng-Yi Jiang is affiliated with Tsinghua University, where he continues to engage in cutting-edge research and development in semiconductor technology. His work has not only contributed to academic knowledge but has also had practical implications in the industry.
Collaborations
Jiang has collaborated with notable colleagues, including Chih-Fang Huang and Ting-Fu Chang. These collaborations have fostered a productive research environment, leading to advancements in semiconductor technologies.
Conclusion
Jheng-Yi Jiang is a key figure in the field of semiconductor innovation, with a focus on enhancing the performance and reliability of MOSFETs. His contributions through patents and collaborations reflect his commitment to advancing technology in this critical area.