The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jul. 24, 2019
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Chih-Fang Huang, Hsinchu, TW;
Jheng-Yi Jiang, Hsinchu, TW;
Sheng-Hong Wang, Douliu, TW;
Jia-Qing Hung, New Taipei, TW;
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01); H01L 21/265 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/82 (2006.01); H01L 21/8234 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/046 (2013.01); H01L 21/049 (2013.01); H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 21/425 (2013.01); H01L 21/8213 (2013.01); H01L 21/823412 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/41783 (2013.01); H01L 29/517 (2013.01); H01L 29/66068 (2013.01); H01L 29/66537 (2013.01); H01L 29/7816 (2013.01);
Abstract
A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.