The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Aug. 29, 2012
Chih-fang Huang, Hsinchu, TW;
Chien-wei Chiu, Beigang Township, Yunlin County, TW;
Ting-fu Chang, Taipei, TW;
Tsung-yu Yang, Kaohsiung, TW;
Tsung-yi Huang, Hsinchu, TW;
Chih-Fang Huang, Hsinchu, TW;
Chien-Wei Chiu, Beigang Township, Yunlin County, TW;
Ting-Fu Chang, Taipei, TW;
Tsung-Yu Yang, Kaohsiung, TW;
Tsung-Yi Huang, Hsinchu, TW;
Richtek Technology Corporation, R.O.C., Hsin-Chu, TW;
Abstract
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT includes a semiconductor layer, a barrier layer on the semiconductor layer, a piezoelectric layer on the barrier layer, a gate on the piezoelectric layer, and a source and a drain at two sides of the gate respectively, wherein each bandgap of the semiconductor layer, the barrier layer, and the piezoelectric layer partially but not entirely overlaps the other two bandgaps. The gate is formed for receiving a gate voltage. A two dimensional electron gas (2DEG) is formed in a portion of a junction between the semiconductor layer and the barrier layer but not below at least a portion of the piezoelectric layer, wherein the 2DEG is electrically connected to the source and the drain.