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For the Inventor, By the Inventor

Newburgh, NY, United States of America

Tina Jane Wagner

This inventor holds 16 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1998-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tina Jane Wagner. Retrieved from https://idiyas.com/inventor/tina-jane-wagner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 68.8

Average Co-Inventor Count = 4.6

ph-index = 8

Forward Citations = 168(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2012)
  • Newburgh, NY (US) (1998 - 2014)

Company Filing History:

goldMedal16 out of 166,325 
 
International Business Machines Corporation
 patents

Years Active: 1998-2014

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16 patents (USPTO):Explore Patents
1. 8631375 - Via selection in integrated circuit design (2014-01-14),
2. 8141027 - Automated sensitivity definition and calibration for design for manufacturing tools (2012-03-20),
3. 7941780 - Intersect area based ground rule for semiconductor design (2011-05-10),
4. 7700425 - Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug (2010-04-20),
5. 7337420 - Methodology for layout-based modulation and optimization of nitride liner stress effect in compact models (2008-02-26),
6. 6930030 - Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness (2005-08-16),
7. 6878624 - Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi (2005-04-12),
8. 6869542 - Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials (2005-03-22),
9. 6660664 - Structure and method for formation of a blocked silicide resistor (2003-12-09),
10. 6436823 - Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed (2002-08-20),
11. 6387790 - Conversion of amorphous layer produced during IMP Ti deposition (2002-05-14),
12. 6345399 - Hard mask process to prevent surface roughness for selective dielectric etching (2002-02-12),
13. 6121129 - Method of contact structure formation (2000-09-18),
14. 612112 - Method of contact structure formation (2000-09-19),
15. 6090722 - Process for fabricating a semiconductor structure having a self-aligned (2000-07-18),

Title: Innovations of Tina Jane Wagner

Introduction

Tina Jane Wagner is a prominent inventor based in Newburgh, NY (US). She has made significant contributions to the field of integrated circuit design, holding a total of 16 patents. Her work focuses on enhancing the efficiency and effectiveness of semiconductor devices.

Latest Patents

Wagner's latest patents include innovative solutions for implementing vias in multi-level integrated circuit layouts. One of her notable inventions involves a method for creating a multi-level integrated circuit layout that includes selecting a via from a library of various types, prioritized by predicted manufacturing yield. Another significant patent addresses the automatic calibration of design for manufacturing (DfM) simulation tools, which enhances the accuracy of simulations for semiconductor device levels.

Career Highlights

Tina Jane Wagner is currently employed at International Business Machines Corporation (IBM), where she continues to push the boundaries of technology. Her expertise in integrated circuit design has positioned her as a key player in the industry, contributing to advancements that benefit various applications.

Collaborations

Wagner has collaborated with notable colleagues, including Richard Stephan Wise and Stephen Edward Greco. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Tina Jane Wagner's contributions to integrated circuit design and her impressive portfolio of patents highlight her role as a leading inventor in the technology sector. Her work continues to influence the future of semiconductor devices and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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