The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Apr. 18, 2008
Albrik Avanessian, Watertown, MA (US);
Henry A. Bonges, Iii, Milton, VT (US);
Dureseti Chidambarrao, Weston, CT (US);
Stephen E. Greco, Lagrangeville, NY (US);
Douglas W. Kemerer, Essex Junction, VT (US);
Tina Wagner, Newburgh, NY (US);
Albrik Avanessian, Watertown, MA (US);
Henry A. Bonges, III, Milton, VT (US);
Dureseti Chidambarrao, Weston, CT (US);
Stephen E. Greco, Lagrangeville, NY (US);
Douglas W. Kemerer, Essex Junction, VT (US);
Tina Wagner, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A design rule that determines a degree of overlap between two design elements in two adjoining levels by estimating a physical overlap area, or an 'intersect area,' of corresponding structures in a semiconductor chip is provided. The estimation of the physical intersect area may factor in line edge biasing, critical dimension tolerance, overlay tolerance, and corner rounding to provide an accurate estimate of a physical area for each of the structures corresponding to the two design elements. The intersect area is employed as a metric to determine compliance with a ground rule, i.e., the ground rule is specified in terms of the intersect region. Other derived quantities such as electrical resistance, electromigration resistance, expected yield may be calculated from the intersect area, and may be advantageously employed to optimize the design data.