The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2000

Filed:

Jan. 14, 1997
Applicant:
Inventors:

Nancy Anne Greco, LaGrangeville, NY (US);

Stephen Edward Greco, LaGrangeville, NY (US);

Tina Jane Wagner, Newburgh, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438622 ; 438624 ; 438638 ; 438672 ;
Abstract

A method of forming a semiconductor structure having features of differing sizes, includes forming a first layer on a semiconductor substrate; patterning only a first plurality of features of a first feature size on the first layer; removing portions of the first layer, the portions corresponding to the first plurality of features, filling the first plurality of openings; forming a second layer, the second layer overlying the first layer and the filled openings; patterning a second plurality of features of a second feature size on the second layer; removing portions of the first layer and second layer, the portions corresponding to the second plurality of features, the second plurality of openings extending through the first and second layers, and filling the second plurality openings.


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