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For the Inventor, By the Inventor

Saint Egreve, France

Thierry Baron

USPTO Granted Patents = 15 

 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 39(Granted Patents)


Location History:

  • Fontaine, FR (2004)
  • Grenoble, FR (2005)
  • Saint-Egrève, FR (2011)
  • Saint Egreve, FR (2012 - 2023)

Company Filing History:

goldMedal10 out of 5,069 
 
Centre National De La Recherche Scientifique
 patents
silverMedal8 out of 4,868 
 
Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives
 patents
bronzeMedal5 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
4. 3 out of 112 
 
Université Joseph Fourier
 patents
5. 3 out of 152 
 
Université Grenoble Alpes
 patents
6. 1 out of 63 
 
Cnrs
 patents
7. 1 out of 98 
 
Institut Polytechnique De Grenoble
 patents
8. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2025

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15 patents (USPTO):Explore Patents
1. 12338545 - Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materials (2025-06-24),
2. 11756787 - Process for the hetero-integration of a semiconductor material of interest on a silicon substrate (2023-09-12),
3. 11342180 - Process for epitaxying gallium selenide on a [111]-oriented silicon substrate (2022-05-24),
4. 10692718 - Polycrystalline semiconductor nanostructured material (2020-06-23),
5. 9917153 - Method for producing a microelectronic device (2018-03-13),
6. 9377684 - Thin films organized in nanodomains on the basis of copolymers having polysaccharide blocks for applications in nanotechnology (2016-06-28),
7. 9293322 - Optimized method for fabricating patterns of III-V semiconductor material on a semiconductor substrate (2016-03-22),
8. 8940623 - Process for obtaining an array of nanodots (2015-01-27),
9. 8685819 - Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines (2014-04-01),
10. 8535962 - Method for making a light-emitting microelectronic device with semi-conducting nanowires formed on a metal substrate (2013-09-17),
11. 8252702 - Fabrication of a memory with two self-aligned independent gates (2012-08-28),
12. 8088674 - Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes (2012-01-03),
13. 7968398 - Method for producing a floating gate with an alternation of lines of first and second materials (2011-06-28),
14. 6946369 - Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material (2005-09-20),
15. 6724017 - Method for automatic organization of microstructures or nanostructures and related device obtained (2004-04-20),

Title: Thierry Baron: Pioneering Inventor from Saint Egreve

Introduction: Thierry Baron is a renowned inventor hailing from Saint Egreve, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Baron's latest patents focus on sustainable energy solutions, advanced robotics, and artificial intelligence, showcasing his commitment to creating cutting-edge technologies that shape the future.

Career Highlights: With a career spanning over two decades, Thierry Baron has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has revolutionized industries such as renewable energy, healthcare, and transportation.

Collaborations: Throughout his career, Baron has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines and industries has led to the creation of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Thierry Baron's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazing inventor in the global tech landscape. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

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