The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 08, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Maxime Legallais, Grenoble Cedex, FR;
Bassem Salem, Grenoble Cedex, FR;
Thierry Baron, Grenoble Cedex, FR;
Romain Gwoziecki, Grenoble Cedex, FR;
Marc Plissonnier, Grenoble Cedex, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres, FR;
Abstract
A method for producing, on a structure based on a material III-V, of a dielectric layer, the method comprising producing a first dielectric film by ALD by carrying out a plurality of first cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a first material and one injection in the reaction chamber of a water or ozone-based precursor; and producing, on the first dielectric film, a second dielectric film by plasma-enhanced ALD by carrying out a plurality of second cycles, each comprising at least: one injection in the reaction chamber of a precursor based on a second material and one injection in the reaction chamber of an oxygen or nitrogen based precursor.