Grenoble, France

Marc Plissonnier


 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Marc Plissonnier

Introduction

Marc Plissonnier is a notable inventor based in Grenoble, France. He has made significant contributions to the field of materials science, particularly in the production of aluminum nitride layers. His work has implications for various applications in electronics and optoelectronics.

Latest Patents

Marc Plissonnier holds a patent for a method of producing a layer of aluminum nitride (AlN) on a structure of silicon or III-V materials. This innovative method involves several deposition cycles performed in a plasma reactor. Each cycle includes the deposition of aluminum-based species on the exposed surface of the structure, followed by nitridation using nitrogen-based precursors. The process allows for the formation of a nitrogen-based plasma, enhancing the quality of the aluminum nitride layer.

Career Highlights

Throughout his career, Marc has worked with prominent organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique (CNRS). His experience in these institutions has allowed him to develop and refine his innovative techniques in materials science.

Collaborations

Marc has collaborated with esteemed colleagues, including Maxime Legallais and Bassem Salem. These partnerships have contributed to the advancement of research in the field and have fostered a collaborative environment for innovation.

Conclusion

Marc Plissonnier's contributions to the field of materials science, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the development of advanced materials for various technological applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…