The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 25, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
C.n.r.s., Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Maxime Legallais, Grenoble, FR;
Bassem Salem, Grenoble, FR;
Thierry Baron, Grenoble, FR;
Romain Gwoziecki, Grenoble, FR;
Marc Plissonnier, Grenoble, FR;
COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
C.N.R.S., Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres, FR;
Abstract
A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage Vmay be applied to the substrate.