The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 11, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Thierry Baron, Saint-Egreve, FR;
Franck Bassani, Echirolles, FR;
Abstract
A method for fabricating patterns of III-V semiconductor material on a semiconductor substrate based on oriented silicon or germanium comprises: production of a growth mask on the surface of the substrate, defining masking patterns Miof width L, of height hwith a distance S between masking patterns; growth of patterns Miof III-V material between said masking patterns, such that said patterns exhibit a height h relative to the top plane of said masking patterns, said height h being at or above a critical minimum height h, the growth step comprising: determining growth rates vand vat right angles to the face of the III-V material, defining ratio R=v/v; determining the angle of dislocations θ of the III-V material relative to the plane of the substrate; determining the critical minimum height hby the equation: with R being determined to be greater than tan(θ).