The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Nov. 24, 2015
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Cnrs Centre National DE LA Recherche Scientifique, Paris, FR;

Institut Polytechnique DE Grenoble, Grenoble, FR;

Inventors:

Pauline Serre, Sassenage, FR;

Thierry Baron, Saint Egreve, FR;

Celine Ternon, Saint Martin le Vinoux, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/41 (2006.01); H01L 29/16 (2006.01); B82Y 40/00 (2011.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02603 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); H01L 29/413 (2013.01);
Abstract

A method for producing a network of nanostructures from at least one semiconductor material, including a step of forming nanostructures on the surface of a substrate, at least a part of the nanostructures having areas of contact between each other, comprising, in sequence and after the step of forming: a step of deoxidising the surface of the nanostructures and a step of reinforcing the bond between the nanostructures at the contact areas.


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