Hsinchu, Taiwan

Tao Cheng Lu

This inventor holds 31 USPTO granted patents and 2 published patent applications, primarily in Nonvolatile Memory Technology. Top assignees: Macronix International Co., Ltd., Other. Active years: 1999-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tao Cheng Lu. Retrieved from https://idiyas.com/inventor/tao-cheng-lu-qox1ln4h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31 

% Patents Active = 96.8

Average Co-Inventor Count = 3.5

ph-index = 12

Forward Citations = 976(Granted Patents)


Location History:

  • San-min District Kaohsiung, TW (1999)
  • Kaoshiung, TW (2002 - 2004)
  • Kaoshing, TW (2009)
  • Koashiung, TW (2001 - 2012)
  • Kaohsiung, TW (2000 - 2013)
  • Hsinchu, TW (2006 - 2016)

Company Filing History:


Years Active: 1999-2016

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Areas of Expertise:
Nonvolatile Memory
Charge Trapping
Programming Methods
Electrostatic Discharge
NAND-Type Memory
Flash Memory
Memory Cells
Trench Technology
Data Retention
Overerase Protection
Multilevel Memory
Semiconductor Structure
31 patents (USPTO):Explore Patents

Title: Innovations by Tao Cheng Lu: A Look into His Patents and Career

Introduction

Tao Cheng Lu, based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology with an impressive portfolio comprising 31 patents. His innovative work focuses on enhancing the performance and efficiency of semiconductor structures and flash memory systems.

Latest Patents

Among his most recent patents is a design for a semiconductor structure that integrates a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) paired with a substrate. This unique structure features a first substrate region that is doped with a stress enhancer, producing a tensile stress oriented along the channel's width, thereby improving the transistor's performance.

Another noteworthy patent outlines a method for programming flash memory, specifically targeting NAND flash memory cell string technology. This method employs a pre-boost stage to elevate the channel voltage of a selected memory cell, followed by a boost stage. The process enhances programming efficiency by manipulating the voltages applied to the bit lines and string select transistors.

Career Highlights

Tao has built his career at several notable companies, including Macronix International Co., Ltd., where he utilized his expertise in semiconductor technologies. His extensive knowledge and experience in the field have equipped him to innovate effectively and make impactful contributions through his patents.

Collaborations

Throughout his career, Tao Cheng Lu has collaborated with talented professionals in the industry, including colleagues Wen Jer Tsai and Chih Chieh Yeh. This collaborative environment has facilitated the sharing of ideas and fostered innovation within his projects.

Conclusion

Tao Cheng Lu's work stands as a testament to the importance of innovation in semiconductor technology. With his numerous patents and fruitful collaborations, he has significantly advanced the field, and his contributions will likely influence future developments in semiconductor and memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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