The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Apr. 02, 2013
Applicant:
Macronix International Co., Ltd., Hsin-Chu, TW;
Inventors:
Guan Wei Wu, Kaohsiung County, TW;
Yao Wen Chang, Hsinchu, TW;
I Chen Yang, Changhua County, TW;
Tao Cheng Lu, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/265 (2006.01); G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); G11C 11/5628 (2013.01); G11C 16/0466 (2013.01); G11C 16/3418 (2013.01); H01L 21/28282 (2013.01); H01L 27/11568 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01); H01L 29/7923 (2013.01);
Abstract
A semiconductor structure has a MOSFET and a substrate to accommodate the MOSFET. The MOSFET has a gate, a source, and a drain in the substrate. A first substrate region surrounding the MOSFET is doped with a stress enhancer, wherein the stress enhancer is configured to generate a tensile stress in the MOSFET's channel and the tensile stress is along the channel's widthwise direction.