The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 08, 2013
Applicant:
Macronix International Co., Ltd., Hsin-Chu, TW;
Inventors:
Chu Yung Liu, Changhua County, TW;
Hsing Wen Chang, Miaoli County, TW;
Yao Wen Chang, Hsinchu County, TW;
Tao Cheng Lu, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01);
Abstract
A method of programming a NAND flash memory cell string. The method includes a pre-boost stage configured to elevate channel voltage of a selected memory cell, and a boost stage is introduced after the pre-boost stage. The pre-boost stage has at least the following steps of biasing a bit line to a first voltage, biasing a string select transistor to a second voltage; and ramping down the string select transistor to the first voltage. In particular, the second voltage is higher than the first voltage.