The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Aug. 15, 2003
Chih Chieh Yeh, Taipei, TW;
Han Chao Lai, Hsinchu, TW;
Wen Jer Tsai, Hualian, TW;
Tao Cheng LU, Kaohsiung, TW;
Chih Yuan LU, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Han Chao Lai, Hsinchu, TW;
Wen Jer Tsai, Hualian, TW;
Tao Cheng Lu, Kaohsiung, TW;
Chih Yuan Lu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.