The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Aug. 15, 2003
Chih Chieh Yeh, Taipei, TW;
Han Chao Lai, Hsinchu, TW;
Wen Her Tsai, Hualien, TW;
Tao Cheng LU, Kaohsiung, TW;
Chih Yuan LU, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Han Chao Lai, Hsinchu, TW;
Wen Her Tsai, Hualien, TW;
Tao Cheng Lu, Kaohsiung, TW;
Chih Yuan Lu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.