Company Filing History:

8 out of 5,671

Globalfoundries Inc.

patents

8 out of 164,197

International Business Machines Corporation

patents

Years Active: 2010-2020

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10658495 - Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact (2020-05-19),

2. 10103083 - Integrated circuits with Peltier cooling provided by back-end wiring (2018-10-16),

3. 9991901 - Method of optimizing CMOS IDAC linearity performance using golden ratio (2018-06-05),

4. 9990454 - Early analysis and mitigation of self-heating in design flows (2018-06-05),

5. 9928335 - Temperature-compliant integrated circuits (2018-03-27),

6. 9773717 - Integrated circuits with peltier cooling provided by back-end wiring (2017-09-26),

7. 9703301 - Methods and control systems of resistance adjustment of resistors (2017-07-11),

8. 9530798 - High performance heat shields with reduced capacitance (2016-12-27),

9. 9508826 - Replacement gate structure for enhancing conductivity (2016-11-29),

10. 9484246 - Buried signal transmission line (2016-11-01),

11. 9450072 - Replacement gate structure for enhancing conductivity (2016-09-20),

12. 9418982 - Multi-layered integrated circuit with selective temperature coefficient of resistance (2016-08-16),

13. 9412759 - CMOS gate contact resistance reduction (2016-08-09),

14. 9400511 - Methods and control systems of resistance adjustment of resistors (2016-07-26),

15. 7791160 - High-performance FET device layout (2010-09-07),

Title: The Innovative Contributions of Inventor Sungjae Lee

Introduction: Sungjae Lee, an accomplished inventor based in Burlington, Vermont, has made significant contributions to the field of semiconductor technology. With a total of 16 patents to his name, Lee's inventions reflect a deep understanding of electronics and material science, positioning him as a notable figure in his industry.

Latest Patents: Among his latest patents is the "Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact." This patent outlines a method for forming a silicon-germanium heterojunction bipolar transistor (HBT) device. The innovative process includes layering four doped semiconductor materials on a substrate, developing a unique vertical fin structure, and enhancing the device's performance through specific layering techniques.

Another remarkable patent of his is for "Integrated circuits with Peltier cooling provided by back-end wiring." This semiconductor structure integrates multiple devices with specific conductors, effectively managing electrical current and heat dissipation within the circuit. The invention utilizes materials with varying Seebeck coefficients to improve efficiency and thermal management in semiconductor devices.

Career Highlights: Sungjae Lee has worked with prominent companies in the tech industry, including GlobalFoundries Inc. and International Business Machines Corporation (IBM). His experiences at these leading firms have undoubtedly shaped his innovative capabilities and expanded his expertise in semiconductor technology.

Collaborations: Throughout his career, Lee has collaborated with notable professionals in his field, including Anthony I Chou and Arvind Kumar. These collaborations have likely contributed to the advancement of his research and the implementation of his inventive concepts in practical applications.

Conclusion: Sungjae Lee's substantial body of work, comprising 16 patents, showcases his dedication to advancing semiconductor technology. His innovative inventions, along with his collaborations and career at leading technology companies, underscore his important role in the field. As technology continues to evolve, Lee's contributions establish a solid foundation for future advancements.

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