The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Jun. 24, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY (US);

Inventors:

Anthony I. Chou, Beacon, NY (US);

Sungjae Lee, Burlington, VT (US);

Joseph M. Lukaitis, Pleasant Valley, NY (US);

Robert R. Robison, Colchester, VT (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H01L 23/522 (2006.01); H01L 23/373 (2006.01); H01L 21/22 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/22 (2013.01); H01L 21/32053 (2013.01); H01L 23/3736 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01);
Abstract

Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation.


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