The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Oct. 25, 2007
Jonghae Kim, Fishkill, NY (US);
Sungjae Lee, Burlington, VT (US);
Jean-olivier Plouchart, New York, NY (US);
Scott Keith Springer, Burlington, VT (US);
Jonghae Kim, Fishkill, NY (US);
Sungjae Lee, Burlington, VT (US);
Jean-Olivier Plouchart, New York, NY (US);
Scott Keith Springer, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A fast FET, a method and system for designing the fast FET and a design structure of the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.