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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9450072 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Oct. 21, 2014

Replacement gate structure for enhancing conductivity

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Anthony I. Chou, Beacon, NY (US);

Arvind Kumar, Chappaqua, NY (US);

Sungjae Lee, Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Scully, Scott, Murphy & Presser, P.C.

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 29/51 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02107 (2013.01); H01L 21/283 (2013.01); H01L 21/28132 (2013.01); H01L 21/28158 (2013.01); H01L 21/31111 (2013.01); H01L 21/3205 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/82345 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/401 (2013.01); H01L 29/4232 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/4958 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01);
Abstract

After formation of a gate cavity straddling at least one semiconductor material portion, a gate dielectric layer and at least one work function material layer is formed over the gate dielectric layer. The at least one work function material layer and the gate dielectric layer are patterned such that remaining portions of the at least one work function material layer are present only in proximity to the at least one semiconductor material portion. A conductive material having a greater conductivity than the at least one work function material layer is deposited in remaining portions of the gate cavity. The conductive material portion within a replacement gate structure has the full width of the replacement gate structure in regions from which the at least one work function material layer and the gate dielectric layer are removed.

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