The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 11, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/84 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/28017 (2013.01); H01L 21/31111 (2013.01); H01L 21/845 (2013.01); H01L 29/0649 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/6653 (2013.01);
Abstract
A gate contact with reduced contact resistance is provided by increasing contact area between the gate contact and a gate conductive portion of a gate structure. The gate contact forms a direct contact with a topmost surface and at least portions of outermost sidewalls of a portion of the gate conductive portion, thus increasing the contact area between the gate contact and the gate structure. The gate contact area of the present application can be further increased by completely surrounding a portion of the gate conductive portion of the gate structure with the gate contact.