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For the Inventor, By the Inventor

San Jose, CA, United States of America

Somesh Peri

USPTO Granted Patents = 16

 

Average Co-Inventor Count = 5.2

ph-index = 11

Forward Citations = 320(Granted Patents)


Company Filing History:

goldMedal16 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2020

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16 patents (USPTO):Explore Patents
1. 10622368 - Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof (2020-04-14),
2. 10355139 - Three-dimensional memory device with amorphous barrier layer and method of making thereof (2019-07-16),
3. 9984963 - Cobalt-containing conductive layers for control gate electrodes in a memory structure (2018-05-29),
4. 9893081 - Ridged word lines for increasing control gate lengths in a three-dimensional memory device (2018-02-13),
5. 9842907 - Memory device containing cobalt silicide control gate electrodes and method of making thereof (2017-12-12),
6. 9812463 - Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof (2017-11-07),
7. 9806089 - Method of making self-assembling floating gate electrodes for a three-dimensional memory device (2017-10-31),
8. 9793139 - Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines (2017-10-17),
9. 9780182 - Molybdenum-containing conductive layers for control gate electrodes in a memory structure (2017-10-03),
10. 9754958 - Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof (2017-09-05),
11. 9698152 - Three-dimensional memory structure with multi-component contact via structure and method of making thereof (2017-07-04),
12. 9659955 - Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure (2017-05-23),
13. 9646975 - Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure (2017-05-09),
14. 9576966 - Cobalt-containing conductive layers for control gate electrodes in a memory structure (2017-02-21),
15. 9530785 - Three-dimensional memory devices having a single layer channel and methods of making thereof (2016-12-27),

Title: Innovations of Somesh Peri

Introduction

Somesh Peri is a prominent inventor based in San Jose, California. He has made significant contributions to the field of memory devices, holding a total of 16 patents. His work focuses on advancing technology in three-dimensional memory devices, which are crucial for modern computing.

Latest Patents

Somesh Peri's latest patents include a three-dimensional memory device featuring semicircular metal-semiconductor alloy floating gate electrodes. This invention involves a complex method of forming azimuthally-split metal-semiconductor alloy floating gate electrodes through an alternating stack of insulating and spacer material layers. The process includes creating a dielectric separator structure and memory openings that divide the dielectric separator into multiple structures. Additionally, he has developed a three-dimensional memory device with an amorphous barrier layer. This invention aims to reduce fluorine diffusion between the metal fill material layer and memory films, enhancing the performance and reliability of memory stack structures.

Career Highlights

Somesh Peri is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His extensive experience and expertise have positioned him as a key player in the development of advanced memory solutions.

Collaborations

Throughout his career, Somesh has collaborated with notable colleagues, including Raghuveer S Makala and Rahul Sharangpani. These collaborations have contributed to the successful development of his innovative patents.

Conclusion

Somesh Peri's contributions to the field of memory devices exemplify his dedication to innovation and technology. His patents reflect a deep understanding of complex engineering principles and a commitment to advancing the capabilities of memory technology.

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