The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Oct. 29, 2015
Sandisk Technologies Inc., Plano, TX (US);
Somesh Peri, San Jose, CA (US);
Sateesh Koka, Milpitas, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Matthias Baenninger, Menlo Park, CA (US);
Jayavel Pachamuthu, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A contact via structure can include a ruthenium portion formed by selective deposition of ruthenium on a semiconductor surface at the bottom of a contact trench. The ruthenium-containing portion can reduce contact resistance at the interface with an underlying doped semiconductor region. At least one conductive material portion can be formed in the remaining volume of the contact trench to form a contact via structure. Alternatively or additionally, a contact via structure can include a tensile stress-generating portion and a conductive material portion. In case the contact via structure is formed through an alternating stack of insulating layers and electrically conductive layers that include a compressive stress-generating material, the tensile stress-generating portion can at least partially cancel the compressive stress generated by the electrically conductive layers. The conductive material portion of the contact via structure can include a metallic material or a doped semiconductor material.