The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 12, 2016
Sandisk Technologies Llc, Plano, TX (US);
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Keerti Shukla, Saratoga, CA (US);
Fei Zhou, Milpitas, CA (US);
Somesh Peri, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
Memory stack structures are formed through an alternating stack of insulating layers and sacrificial material layers. Backside recesses are formed by removal of the sacrificial material layers selective to the insulating layers and the memory stack structures. An electrically conductive, amorphous barrier layer can be formed prior to formation of a metal fill material layer to provide a diffusion barrier that reduces fluorine diffusion between the metal fill material layer and memory films of memory stack structures. The electrically conductive, amorphous barrier layer can be an oxygen-containing titanium compound or a ternary transition metal nitride.