The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jul. 29, 2016
Sandisk Technologies Llc, Plano, TX (US);
Somesh Peri, San Jose, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Keerti Shukla, Milpitas, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A memory stack structure including a memory film and a vertical semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a backside blocking dielectric layer is formed in the backside recesses and sidewalls of the memory stack structures. A metallic barrier material portion can be formed in each backside recess. A cobalt metal portion can be formed in each backside recess. Each backside recess can be filled with a portion of a backside blocking dielectric layer, a metallic barrier material portion, a cobalt metal portion, and a metallic material portion including a material other than cobalt.