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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793139 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Mar. 31, 2016

Robust nucleation layers for enhanced fluorine protection and stress reduction in 3d nand word lines

Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Keerti Shukla, Saratoga, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Somesh Peri, San Jose, CA (US);

Yao-Sheng Lee, Tampa, FL (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/443 (2006.01); H01L 29/49 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11534 (2017.01); H01L 27/11573 (2017.01); H01L 21/768 (2006.01); H01L 21/441 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 27/105 (2006.01); H01L 21/3065 (2006.01); H01L 27/11563 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/443 (2013.01); H01L 21/3065 (2013.01); H01L 21/311 (2013.01); H01L 21/441 (2013.01); H01L 21/76871 (2013.01); H01L 27/0688 (2013.01); H01L 27/108 (2013.01); H01L 27/1052 (2013.01); H01L 27/10844 (2013.01); H01L 27/11534 (2013.01); H01L 27/11556 (2013.01); H01L 27/11563 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/495 (2013.01); H01L 29/4975 (2013.01);
Abstract

A silicon-containing nucleation layer can be employed to provide a self-aligned template for selective deposition of tungsten within backside recesses during formation of a three-dimensional memory device. The silicon-containing nucleation layer may remain as a silicon layer, converted into a tungsten silicide layer, or replaced with a tungsten nucleation layer. Tungsten deposition can proceed only on the surface of the silicon-containing nucleation layer or a layer derived therefrom in a subsequent tungsten deposition process.

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