The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jun. 26, 2015
Sandisk Technologies Inc., Plano, TX (US);
Somesh Peri, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Sateesh Koka, Milpitas, CA (US);
Yao-Sheng Lee, Tampa, FL (US);
Johann Alsmeier, San Jose, CA (US);
George Matamis, Danville, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a metallic barrier material portion can be formed in each backside recess. A molybdenum-containing portion can be formed in each backside recess. Each backside recess can be filled with a molybdenum-containing portion alone, or can be filled with a combination of a molybdenum-containing portion and a metallic material portion including a material other than molybdenum.