Yokohama, Japan

Soichi Nadahara

This inventor holds 31 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, Ebara Corporation, International Business Machines Corporation. Active years: 1992-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Soichi Nadahara. Retrieved from https://idiyas.com/inventor/soichi-nadahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 58.1

 

Average Co-Inventor Count = 3.5

ph-index = 11

Forward Citations = 297(Granted Patents)


Location History:

  • Inagi, JP (1992)
  • Tokyo, JP (1994)
  • Kanagawa-ken, JP (2001 - 2003)
  • Kanagawa, JP (2001 - 2007)
  • Yokohama, JP (1998 - 2010)
  • Kyoto, JP (2011 - 2018)

Company Filing History:


Years Active: 1992-2018

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Areas of Expertise:
Etching Apparatus
Substrate Treatment
Semiconductor Wafer
Polishing Method
Cleaning Method
Material Supply System
Wafer Drying
Trench Capacitors
Vapor Drying
Seamless Isolation
ID Mark Technology
Progressive Megasonic Wave
31 patents (USPTO):Explore Patents

Title: Soichi Nadahara: Pioneer in Substrate Treatment Technologies

Introduction: Soichi Nadahara, based in Yokohama, Japan, is an accomplished inventor with a remarkable portfolio of 31 patents. His innovative designs primarily focus on substrate treatment apparatuses and methods, contributing to advancements in the field of semiconductor manufacturing.

Latest Patents: Nadahara's latest patents include a substrate treating apparatus and a substrate treating method. The substrate treating apparatus features a supplying unit that delivers a process liquid containing a sublimable substance in a molten state to a pattern-formed surface of a substrate. The apparatus also has a solidifying unit that solidifies this liquid to form a solidified body and a sublimating unit that removes the solidified body via sublimation. Notably, the sublimable substance used in this process includes a fluorinated carbon compound. Additionally, another significant patent involves a substrate treatment apparatus with a scrub brush that removes foreign matter from the substrate while an alkaline treatment liquid is applied. This innovative design enhances the efficiency of maintaining clean substrate surfaces during processing.

Career Highlights: Throughout his career, Soichi Nadahara has made substantial contributions to the fields of technology and engineering, particularly during his time at Kabushiki Kaisha Toshiba and Ebara Corporation. His expertise and dedication have led to the creation of advanced technologies that are now integral to modern substrate treatment processes.

Collaborations: Nadahara has collaborated with esteemed colleagues such as Hiroshi Tomita and Masao Iwase, who have shared his vision of pushing the boundaries of substrate treatments and enhancing manufacturing processes in related industries. Their combined efforts have significantly influenced the development of efficient and effective treatment technologies.

Conclusion: Soichi Nadahara's innovative spirit and commitment to advancing substrate treatment technologies have earned him a prominent position in the field. His 31 patents represent not only his technical prowess but also his contribution to enhancing the efficiency and functionality of substrate processing methods. As technology continues to evolve, Nadahara's work will likely remain influential in shaping the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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